| 1. Identificação | |
| Tipo de Referência | Artigo em Revista Científica (Journal Article) |
| Site | marte3.sid.inpe.br |
| Código do Detentor | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identificador | 6qtX3pFwXQZ3r59YCT/H3LsU |
| Repositório | sid.inpe.br/iris@1905/2005/08.04.03.18 (acesso restrito) |
| Última Atualização | 2006:01.26.15.29.00 (UTC) administrator |
| Repositório de Metadados | sid.inpe.br/iris@1905/2005/08.04.03.18.44 |
| Última Atualização dos Metadados | 2018:06.06.03.55.45 (UTC) administrator |
| Chave Secundária | INPE-13388-PRE/8603 |
| ISSN | 0257-8972 |
| Rótulo | 10542 |
| Chave de Citação | UedaLepRanCruDia:2002:NaCoAn |
| Título | Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation  |
| Ano | 2002 |
| Data Secundária | 20020612 |
| Mês | July |
| Data de Acesso | 03 maio 2024 |
| Tipo Secundário | PRE PI |
| Número de Arquivos | 1 |
| Tamanho | 100 KiB |
| 2. Contextualização | |
| Autor | 1 Ueda, Mario 2 Lepienski, C. M. 3 Rangel, E. C. 4 Cruz, NC 5 Dias, F. G. |
| Grupo | 1 LAP-INPE-MCT-BR |
| Afiliação | 1 Instituto Nacional de Pesquisas Espaciais (INPE). Laboratório de Física de Plasma (LAP) |
| Revista | Surface and Coatings Technology |
| Volume | 156 |
| Número | 1-3 |
| Páginas | 190-194 |
| Histórico (UTC) | 2005-08-04 03:18:44 :: administrator -> jefferson :: 2006-01-26 15:33:07 :: jefferson -> administrator :: 2018-06-06 03:55:45 :: administrator -> marciana :: 2002 |
| 3. Conteúdo e estrutura | |
| É a matriz ou uma cópia? | é a matriz |
| Estágio do Conteúdo | concluido |
| Transferível | 1 |
| Tipo do Conteúdo | External Contribution |
| Palavras-Chave | FISICA DE PLASMA Plasma immersion ion implantation Surface analysis Nanohardness Contact angle Silicon carbide Silicon nitride |
| Resumo | Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17)cm(-2)dose)increased by 10 percent compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17)cm(-2)dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65 pecent and 35 percent for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV)showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17)cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV)showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17)cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. |
| Área | FISPLASMA |
| Arranjo | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Nanohardness and contact... |
| Conteúdo da Pasta doc | acessar |
| Conteúdo da Pasta source | não têm arquivos |
| Conteúdo da Pasta agreement | não têm arquivos |
| 4. Condições de acesso e uso | |
| Idioma | en |
| Arquivo Alvo | ueda.pdf |
| Grupo de Usuários | administrator jefferson |
| Visibilidade | shown |
| Detentor da Cópia | SID/SCD |
| Política de Arquivamento | denypublisher denyfinaldraft24 |
| Permissão de Leitura | deny from all and allow from 150.163 |
| 5. Fontes relacionadas | |
| Unidades Imediatamente Superiores | 8JMKD3MGPCW/3ET2RFS |
| Divulgação | WEBSCI; PORTALCAPES. |
| Acervo Hospedeiro | sid.inpe.br/banon/2001/04.03.15.36 |
| 6. Notas | |
| Campos Vazios | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Controle da descrição | |
| e-Mail (login) | marciana |
| atualizar | |