%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@issn 0168-583X
%@issn 0167-5087
%@usergroup administrator
%3 AFBeloto_Article_NucInstrumMethodsPhysResB2003.pdf
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%@secondarykey INPE-9885-PRE/5458
%A Beloto, Antonio Fernando,
%A Silva, Marcos Dias da,
%A Senna, José Roberto,
%A Kuranaga, Carlos,
%A Leite, Nélia Ferreira,
%A Ueda, Mário,
%T Photoluminescence and reflectance measurements on annealed porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
%D 2003
%V 206
%P 677-681
%8 May
%2 sid.inpe.br/marciana/2003/08.15.15.44.24
%4 sid.inpe.br/marciana/2003/08.15.15.44
%K porous silicon, plasma immersion ion implantation, photoluminescence, reflectance.
%X Porous Silicon (PS), approximately 1 mum thick, was obtained from n-type (100) monocrystalline silicon wafers using two different anodization conditions. The PS samples were implanted with nitrogen by PIII and annealed at temperatures between 100 and 1000 degreesC. Photoluminescence (PL) and reflectance measurements on the implanted samples for wavelengths between 220 and 800 nm were carried out before and after annealing. Two peaks of PL intensity in the visible region. (640 and 730 nm) were observed. Increasing the annealing temperature reduced the PL intensity and changed the relative intensity between the peaks. A reduction in the ultraviolet reflectance was observed for polished implanted Si samples and for both types of implanted PS samples before annealing. After annealing, the reflectance decreased in the UV region up to 600 degreesC. Above 800 degreesC, there was an increase in reflectance, indicating occurrence of recrystallization
%@language English
%@copyholder SID/SCD
%@secondarytype PRE PI
%@area FISMAT
%@group LAS-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@affiliation Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12245970 Sao Jose Dos Campos, Brazil,
%@affiliation Inst Nacl Pesquisas Espaciais, Lab Associado Plasma, BR-12245970 Sao Jose Dos Campos, Brazil,